Lead Principal Engineer Device Development RF-GaN (w/m/div)

Shape the future: Development of leading-edge RF-GaN/Si device technologies for RF power applications from process concept to production handover Creativity: Implementation of novel process and device concepts for next-generation RF-GaN/Si technology platforms Data is everything: Optimization of device performance and reliability as well as development of required characterization methods Stakeholder management: Coordination with project management, process development, characterization, product design and customers Teamwork makes the dream work: Collaboration within an international multi-site environment Take responsibility: Advancement of RF-GaN/Si device technology development with a focus on high-performance applications Degree: You hold a Master's degree or PhD in Microelectronics, Electrical Engineering or Physics Work experience: You bring more than 10 years of experience in GaN device technology development Personality: You demonstrate a high level of initiative, self-motivation, result orientation and a proactive mindset Working style: You contribute strong team player skills and a clear focus on achieving results and moving forward Skills: You possess in-depth GaN device